fast ir fet? IRFH4209DPBF 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH4209DPBF pqfn 5mm x 6 mm tape and reel 4000 irfh4209dtrpbf v dss 25 v r ds(on) max (@ v gs = 10v) 1.10 ? (@ v gs = 4.5v) 1.35 qg (typical) 36 nc i d (@t c (bottom) = 25c) 100 ? a m ??? ? ? pqfn 5x6 mm features benefits low r ds(on) (<1.10 m ? ) lower conduction losses schottky intrinsic diode with low forward voltage lower switching losses low thermal resistance to pcb (<1.0c/w) enable better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability notes ? through ? are on page 9 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 44 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 260 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 165 ?? i dm pulsed drain current ? 400 p d @t a = 25c power dissipation ? 3.5 w p d @t c(bottom) = 25c power dissipation 125 linear derating factor 0.028 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 100 ? applications ?? synchronous rectifier mosfet fo r synchronous buck converters
? IRFH4209DPBF 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 d s g static @ t j = 25c (unless otherwise specified) ?? ? ? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 25 ??? ??? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j breakdown voltage temp. coefficient ??? 18 ??? mv/c reference to 25c, i d = 10ma r ds(on) static drain-to-source on-resistance ??? 0.85 1.10 m ? v gs = 10v, i d = 50a ? ??? 1.10 1.35 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.1 1.6 2.1 v v ds = v gs , i d = 100a ? v gs(th) gate threshold voltage coefficient ??? -9.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 250 a v ds = 20v, v gs = 0v i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 300 ??? ??? s v ds = 13v, i d = 50a q g total gate charge ??? 74 ??? nc v gs = 10v, v ds = 13v, i d = 50a q g total gate charge ??? 36 54 q gs1 pre-vth gate-to-source charge ??? 7.5 ??? ? v ds = 13v q gs2 post-vth gate-to-source charge ??? 4.4 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 12.0 ??? ? i d = 50a q godr gate charge overdrive ??? 12.1 ??? ? q sw switch charge (q gs2 + q gd ) ??? 16.4 ??? ? q oss output charge ??? 37 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 0.8 ??? ? ? t d(on) turn-on delay time ??? 15 ??? v dd = 13v, v gs = 4.5v t r rise time ??? 49 ??? ns i d = 50a t d(off) turn-off delay time ??? 21 ??? ? r g =1.8 ? t f fall time ??? 17 ??? ? c iss input capacitance ??? 4620 ??? v gs = 0v c oss output capacitance ??? 1450 ??? pf v ds = 13v c rss reverse transfer capacitance ??? 340 ??? ? ? = 1.0mhz avalanche characteristics ?? ? ? parameter typ. max. e as single pulse avalanche energy ? ??? 247 i ar avalanche current ? ??? 50 diode characteristics ?? ? ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 400 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 0.75 v t j = 25c, i s = 50a, v gs = 0v ? t rr reverse recovery time ??? 33 50 ns t j = 25c, i f = 50a, v dd = 13v q rr reverse recovery charge ??? 83 125 nc di/dt = 300a/s ? ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 1.0 r ? jc (top) junction-to-case ? ??? 22 c/w r ? ja junction-to-ambient ? ??? 36 r ? ja (<10s) junction-to-ambient ? ??? 21 thermal resistance
? IRFH4209DPBF 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.25v 3.0v bottom 2.75v ? 60s pulse width tj = 25c 2.75v fig 1. typical output characteristics 0 102030405060708090100 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 50a fig 4. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.75v ? 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.25v 3.0v bottom 2.75v fig 2. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.6 0.6 0.8 0.8 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width
? IRFH4209DPBF 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 9. maximum drain current vs. case temperature fig 10. drain-to-source breakdown voltage fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
? IRFH4209DPBF 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 fig 12. on-resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulse width 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 24a bottom 50a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? IRFH4209DPBF 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ?
? IRFH4209DPBF 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? IRFH4209DPBF 8 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 pqfn 5x6 tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description typ e package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1
? IRFH4209DPBF 9 www.irf.com ? 2015 international rectifier submit datasheet feedback march 16, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.21mh, r g = 50 ? , i as = 50a. ? pulse width ? 400 s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90 c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. ? current is limited to 100a by source bonding technology. qualification information ? ? qualification level ? industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes revision history 3/16/2015 ?? updated package outline and tape and reel on pages 7 and 8.
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